High indium content InGaAs photodetector: with InGaAs or InAlAs graded buffer layers
نویسندگان
چکیده
منابع مشابه
Selective Oxidation on High-Indium-Content InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistors
Up to now, many efforts have been continuously channeled toward the development of oxidation techniques on the III-V compounds for GaAs-based device application, which include thermal oxidation [1-7], chemical anodization [8-12], photochemical oxidation [13-16], plasma oxidation [17-20], Ga2O3 grown by molecular beam epitaxy (MBE) [21-23], Al2O3 grown by atomic layer deposition (ALD) [24], oxid...
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Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strainrelaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content....
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Recently, microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1]. Although some simulations have been performed for the optimization of GaAs-based PNP HBTs [2], little has been reported on the optimization of PNP HBTs in the InP material system. In this work, various layer structures for InAlAs/InGaAs PNP HBTs were simulated using a 2dimensional drift-diffusion simulator in orde...
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ژورنال
عنوان ژورنال: JOURNAL OF INFRARED AND MILLIMETER WAVES
سال: 2012
ISSN: 1001-9014
DOI: 10.3724/sp.j.1010.2011.00481